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1.25 W Other Function Transistors 4

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SJ690-T1B-AT by Renesas Electronics

2SJ690-T1B-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 2.5 A;

SINGLE

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.25 W

Other Transistors

YES

SSM3J14T(TE85L,F) by Toshiba

SSM3J14T(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

SINGLE

2.7 A

2.7 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.25 W

Other Transistors

YES

SSM3J307T(TE85L,F) by Toshiba

SSM3J307T(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 5 A; No. of Elements: 1;

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.25 W

Other Transistors

YES

SSM3J321T(TE85L,F) by Toshiba

SSM3J321T(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5.2 A;

SINGLE

5.2 A

5.2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.25 W

Other Transistors

YES