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1.2 W Other Function Transistors 1

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE856M02-T1-AZ by Renesas Electronics

NE856M02-T1-AZ

Renesas Electronics

NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.

.1 A

SINGLE

50

1

150 Cel

NPN

1.2 W

Other Transistors

YES