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.83 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BC635-16,126 by NXP Semiconductors

BC635-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS4350S,126 by NXP Semiconductors

PBSS4350S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 3 A;

3 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110AS,126 by NXP Semiconductors

PBSS8110AS,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110S,126 by NXP Semiconductors

PBSS8110S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS9110AS,126 by NXP Semiconductors

PBSS9110AS,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

125

1

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PBSS9110S,126 by NXP Semiconductors

PBSS9110S,126

NXP Semiconductors

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

125

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz