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.8 W Other Function Transistors 4

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
SSM3J114TU(TE85L) by Toshiba

SSM3J114TU(TE85L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.8 A; Operating Mode: ENHANCEMENT MODE;

SINGLE

1.8 A

1.8 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.8 W

Other Transistors

YES

SSM3J118TU(TE85L) by Toshiba

SSM3J118TU(TE85L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.4 A; Maximum Operating Temperature: 150 Cel;

SINGLE

1.4 A

1.4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.8 W

Other Transistors

YES

SSM3J108TU(TE85L) by Toshiba

SSM3J108TU(TE85L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1.8 A;

SINGLE

1.8 A

1.8 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.8 W

Other Transistors

YES

SSM5G10TU(TE85L,F) by Toshiba

SSM5G10TU(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Drain Current (ID): 1.5 A;

SINGLE

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

125 Cel

P-CHANNEL

.8 W

Other Transistors

YES