Loading...

.7 W Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFP196R-E6327 by Infineon Technologies

BFP196R-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

70

1

150 Cel

NPN

.7 W

Other Transistors

YES

5000 MHz

SSM3J306T(TE85L,F) by Toshiba

SSM3J306T(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 2.4 A;

SINGLE

2.4 A

2.4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.7 W

Other Transistors

YES