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.35 W Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2N5952-D74Z by Fairchild Semiconductor

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

JUNCTION

e3

150 Cel

N-CHANNEL

.35 W

Other Transistors

NO

Matte Tin (Sn)

FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.

SINGLE

.46 A

.46 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.35 W

Other Transistors

YES