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.225 W Other Function Transistors 1

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BF862,235 by NXP Semiconductors

BF862,235

NXP Semiconductors

NXP Semiconductors' BF862,235 is an N-CHANNEL JUNCTION FET with 0.225W power dissipation and 150°C max operating temp. It's surface-mountable with TIN terminal finish, ideal for high-frequency applications in RF amplifiers and mixers.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.225 W

Other Transistors

YES

TIN

30