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.125 W Other Function Transistors 4

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NE856M03-A by Renesas Electronics

NE856M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

80

1

150 Cel

NPN

.125 W

Other Transistors

YES

3000 MHz

NE685M03-A by Renesas Electronics

NE685M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE685M03-T1-A by Renesas Electronics

NE685M03-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE3513M04-A by Renesas Electronics

NE3513M04-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

125 Cel

N-CHANNEL

.125 W

Other Transistors

YES