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6500 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD1200R17HP4-K_B2 by Infineon Technologies

FD1200R17HP4-K_B2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PUFM-X7;

ISOLATED

1700 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X7

1

1

7

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

6500 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1800 ns

900 ns

2.25 V

FD1200R17HP4KB2BOSA2 by Infineon Technologies

FD1200R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;

ISOLATED

1700 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X7

1

1

7

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

6500 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1800 ns

900 ns

2.25 V