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44 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGIPL14K60 by STMicroelectronics

STGIPL14K60

STMicroelectronics

STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.

ISOLATED

14 A

600 V

COMPLEX

R-PDIP-T38

e3

6

38

125 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

44 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

MOTOR CONTROL

SILICON

425 ns

400 ns

2.5 V