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305 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW50N65F5FKSA1 by Infineon Technologies

IGW50N65F5FKSA1

Infineon Technologies

IGW50N65F5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -40 to 175 °C.

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

305 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

35 ns

2.1 V

IGW50N65H5FKSA1 by Infineon Technologies

IGW50N65H5FKSA1

Infineon Technologies

IGW50N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

305 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

35 ns

2.1 V

IKW50N65H5FKSA1 by Infineon Technologies

IKW50N65H5FKSA1

Infineon Technologies

IKW50N65H5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 231ns and can handle up to 305W power dissipation.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

305 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

35 ns

2.1 V