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298 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
HGT1N40N60A4D by Fairchild Semiconductor

HGT1N40N60A4D

Fairchild Semiconductor

Fairchild Semiconductor's HGT1N40N60A4D is an N-CHANNEL IGBT with 110A IC, 600V VCE, and 298W Pd. Ideal for POWER CONTROL applications, it features a toff of 240ns, tf of 95ns, and ton of 47ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

LOW CONDUCTION LOSS

ISOLATED

110 A

600 V

SINGLE WITH BUILT-IN DIODE

95 ns

7 V

20 V

R-PUFM-X4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

298 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

240 ns

47 ns

NGTB60N60SWG by Onsemi

NGTB60N60SWG

Onsemi

NGTB60N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 298W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

120 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

298 W

Insulated Gate BIP Transistors

NO

TIN