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255 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW40N65F5FKSA1 by Infineon Technologies

IGW40N65F5FKSA1

Infineon Technologies

Infineon's IGW40N65F5FKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles due to its robust design and high operating temperature of 175°C.

74 A

650 V

4.8 V

20 V

e3

175 Cel

N-CHANNEL

255 W

Insulated Gate BIP Transistors

NO

TIN

IGW40N65H5FKSA1 by Infineon Technologies

IGW40N65H5FKSA1

Infineon Technologies

IGW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 255W power dissipation, 650V collector-emitter voltage, and 74A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 4.8V. Ideal for high-power applications in various industries due to its robust performance and efficiency.

74 A

650 V

4.8 V

20 V

e3

175 Cel

N-CHANNEL

255 W

Insulated Gate BIP Transistors

NO

TIN