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240 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWA40N120KD by STMicroelectronics

STGWA40N120KD

STMicroelectronics

STGWA40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 564ns.

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

564 ns

83 ns

STGW40N120KD by STMicroelectronics

STGW40N120KD

STMicroelectronics

STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.

COLLECTOR

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

564 ns

83 ns