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230 W Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DF75R12W1H4FB11BOMA1 by Infineon Technologies

DF75R12W1H4FB11BOMA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 125 Cel;

ISOLATED

50 A

1200 V

6.5 V

20 V

125 Cel

-40 Cel

NOT SPECIFIED

N-Channel

230 W

NOT SPECIFIED

SILICON

500 ns

58 ns

2.65 V

DGTD65T40S2PT by Diodes Incorporated

DGTD65T40S2PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

230 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

162 ns

48 ns

2.3 V

STGWA40HP65FB2 by STMicroelectronics

STGWA40HP65FB2

STMicroelectronics

STGWA40HP65FB2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, supports up to 72A collector current, and operates b/w -55 °C to 175 °C. Its robust design ensures efficient performance in demanding environments.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

189 ns

2 V

STGWA40H65DFB2 by STMicroelectronics

STGWA40H65DFB2

STMicroelectronics

STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

158 ns

34 ns

2 V

STGWA40H65DHFB2 by STMicroelectronics

STGWA40H65DHFB2

STMicroelectronics

STGWA40H65DHFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and has a power dissipation of 230W. Ideal for high-performance switching in industrial systems.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

183 ns

24.6 ns

2 V

GT30J341,Q by Toshiba

GT30J341,Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 25 V;

COLLECTOR

59 A

600 V

SINGLE WITH BUILT-IN DIODE

25 V

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

400 ns

250 ns

2 V