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20000 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ3600R17KE3B2NOSA1 by Infineon Technologies

FZ3600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 20000 W; Maximum Collector Current (IC): 4800 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V;

ISOLATED

4800 A

1700 V

COMPLEX

6.4 V

20 V

R-XUFM-X9

1

3

9

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

20000 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

2100 ns

1050 ns

2.45 V