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187 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IHW30N60TFKSA1 by Infineon Technologies

IHW30N60TFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

187 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

382 ns

50 ns

AIKW30N60CTXKSA1 by Infineon Technologies

AIKW30N60CTXKSA1

Infineon Technologies

Infineon's AIKW30N60CTXKSA1 is an N-CHANNEL IGBT with VCEsat of 2.05V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 388ns, ton of 50ns, and can handle up to 187W power dissipation. Suitable for FLANGE MOUNT installations with a max temp rating of 175°C.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

187 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

388 ns

50 ns

2.05 V