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1440 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
QID4515001 by Powerex

QID4515001

Powerex

Powerex QID4515001 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3.9V and can handle a Max Collector Current of 150A. Ideal for POWER CONTROL applications due to its high power dissipation capability of 1440W and max operating temperature of 150°C.

ISOLATED

150 A

4500 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 ns

7.5 V

20 V

R-PUFM-X8

2

8

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1440 W

Not Qualified

IEC-60077-1; IEC-1287

500 ns

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4700 ns

2000 ns

3.9 V