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142.8 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
A1C15S12M3-F by STMicroelectronics

A1C15S12M3-F

STMicroelectronics

A1C15S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a compact flange mount design, it excels in high-power systems.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V

A1C15S12M3 by STMicroelectronics

A1C15S12M3

STMicroelectronics

STMicroelectronics A1C15S12M3 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Nominal Turn Off Time of 199ns, and Max Collector Current of 15A. Ideal for high-power systems requiring efficient switching with a max operating temperature of 150°C.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V