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136 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MGB15N40CLT4 by Onsemi

MGB15N40CLT4

Onsemi

MGB15N40CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 22V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package with GULL WING terminals. The transistor has a nominal turn-off time of 20500ns and can handle a max collector current of 15A.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.1 V

22 V

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

136 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns