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1250 W Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS600R07A2E3BOSA1 by Infineon Technologies

FS600R07A2E3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 530 A; JESD-30 Code: R-XUFM-X33;

ISOLATED

530 A

650 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1250 W

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

540 ns

190 ns

1.6 V

FS225R12OE4BOSA1 by Infineon Technologies

FS225R12OE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 350 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

350 A

1200 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X29

6

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1250 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

570 ns

230 ns

2.15 V

FS600R07A2E3B32BOSA1 by Infineon Technologies

FS600R07A2E3B32BOSA1

Infineon Technologies

Infineon's FS600R07A2E3B32BOSA1 is an N-CHANNEL IGBT with 6 elements, 33 terminals, and max VCEsat of 1.6V. Ideal for power control applications, it features a max collector-emitter voltage of 650V and can handle up to 530A collector current efficiently. With a package style of FLANGE MOUNT and operating temperature range from -40°C to 150°C, this IGBT offers reliable performance in various power systems.

ISOLATED

530 A

650 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1250 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

540 ns

190 ns

1.6 V

FS400R07A1E3S7BOMA1 by Infineon Technologies

FS400R07A1E3S7BOMA1

Infineon Technologies

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.

ISOLATED

500 A

705 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X25

1

6

25

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1250 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

540 ns

220 ns

1.7 V

FS400R07A3E3BOMA1 by Infineon Technologies

FS400R07A3E3BOMA1

Infineon Technologies

FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).

ISOLATED

500 A

705 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC

6.5 V

20 V

R-XUFM-X29

1

6

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1250 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

430 ns

200 ns

1.7 V

FS400R07A1E3BOMA1 by Infineon Technologies

FS400R07A1E3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; No. of Terminals: 23;

ISOLATED

500 A

650 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X23

1

6

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1250 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

580 ns

200 ns

1.9 V