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10500 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD16001200R17HP4KB2BOSA1 by Infineon Technologies

FD16001200R17HP4KB2BOSA1

Infineon Technologies

Infineon's FD16001200R17HP4KB2BOSA1 is an N-CHANNEL IGBT with 2 elements & built-in diode, ideal for power control applications. Featuring a max VCEsat of 2.25V, it can handle up to 10500W power dissipation at 150°C. With a max VCE of 1700V and turn-off time of 1710ns, this UL-approved transistor ensures efficient performance in high-power systems.

ISOLATED

1700 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X9

2

9

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

10500 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1710 ns

650 ns

2.25 V

FZ1600R17HP4B2BOSA2 by Infineon Technologies

FZ1600R17HP4B2BOSA2

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 10500 W; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 1710 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 805 ns;

ISOLATED

1700 V

6.4 V

20 V

1

150 Cel

-40 Cel

N-Channel

10500 W

SILICON

1710 ns

805 ns

2.25 V