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105 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD3NC120H-1 by STMicroelectronics

STGD3NC120H-1

STMicroelectronics

STGD3NC120H-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 16A IC, and 105W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 2.8V and fast turn-off time of 342ns. Package style is IN-LINE with through-hole terminals.

COLLECTOR

16 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

105 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

342 ns

18.5 ns

2.8 V

IKP15N65H5XKSA1 by Infineon Technologies

IKP15N65H5XKSA1

Infineon Technologies

IKP15N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and Pmax of 105W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 196ns and high operating temperature up to 175°C. Package style is FLANGE MOUNT with COLLECTOR connection.

COLLECTOR

30 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

105 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

24 ns

2.1 V