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83 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS50R12W2T4BOMA1 by Infineon Technologies

FS50R12W2T4BOMA1

Infineon Technologies

Infineon's FS50R12W2T4BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 83A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (490ns) and high operating temperature (175°C). Package style: FLANGE MOUNT, configuration: COMPLEX.

ISOLATED

83 A

1200 V

COMPLEX

R-XUFM-X15

6

15

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

490 ns

185 ns

FS50R12W2T4B11BOMA1 by Infineon Technologies

FS50R12W2T4B11BOMA1

Infineon Technologies

Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.

83 A

1200 V

COMPLEX

R-XUFM-X18

6

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

490 ns

185 ns