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700 A Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF600R06ME3BOSA1 by Infineon Technologies

FF600R06ME3BOSA1

Infineon Technologies

FF600R06ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 600V, and a current rating of 700A. It features a nominal turn-off time of 805ns and turn-on time of 220ns, suitable for high-power applications in industries like automotive and renewable energy.

ISOLATED

700 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

805 ns

220 ns

FZ600R12KS4HOSA1 by Infineon Technologies

FZ600R12KS4HOSA1

Infineon Technologies

FZ600R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Nominal Turn Off Time of 590ns. It features a SINGLE configuration with BUILT-IN DIODE, suitable for high-power applications like industrial motor drives and renewable energy systems.

ISOLATED

700 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

FF600R07ME4B11BOSA1 by Infineon Technologies

FF600R07ME4B11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Elements: 2; JESD-30 Code: R-XUFM-X11;

ISOLATED

700 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

570 ns

250 ns

MG06600WB-BN4MM by Littelfuse

MG06600WB-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;

ISOLATED

700 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

785 ns

205 ns

FS800R07A2E3BOSA2 by Infineon Technologies

FS800R07A2E3BOSA2

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Terminals: 33; Package Style (Meter): FLANGE MOUNT;

ISOLATED

700 A

650 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X33

6

33

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

690 ns

230 ns

FS800R07A2E3B31BOSA1 by Infineon Technologies

FS800R07A2E3B31BOSA1

Infineon Technologies

Infineon's FS800R07A2E3B31BOSA1 is an N-Channel IGBT with VCEsat of 1.5V, toff of 620ns, and Pmax of 1550W. Ideal for high-power applications like industrial motor drives due to its max VCE of 650V, IC of 700A, and operating temp range from -40°C to 150°C.

ISOLATED

700 A

650 V

6.5 V

20 V

150 Cel

-40 Cel

N-Channel

1550 W

SILICON

620 ns

230 ns

1.5 V

FS800R07A2E3BOSA4 by Infineon Technologies

FS800R07A2E3BOSA4

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Elements: 6; Transistor Application: POWER CONTROL;

ISOLATED

700 A

650 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X33

6

33

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

690 ns

230 ns