Loading...

67 A Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH80T120L2Q0S2G by Onsemi

NXH80T120L2Q0S2G

Onsemi

NXH80T120L2Q0S2G by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 293ns and high operating temperature range (-40 to 150 °C).

RC-IGBT

ISOLATED

67 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

158 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

293 ns

88 ns

2.85 V

IKW40N60DTPXKSA1 by Infineon Technologies

IKW40N60DTPXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 67 A; No. of Terminals: 3; Terminal Finish: TIN;

67 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

320 ns

49 ns

IGW40N60TPXKSA1 by Infineon Technologies

IGW40N60TPXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 67 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;

67 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

320 ns

49 ns

NXH80T120L2Q0P2G by Onsemi

NXH80T120L2Q0P2G

Onsemi

NXH80T120L2Q0P2G by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its low 2.85V VCEsat and fast switching times of 88ns turn on and 293ns turn off. Suitable for high-power systems requiring efficient control in a complex configuration.

RC-IGBT

ISOLATED

67 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

158 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

293 ns

88 ns

2.85 V

NXH80T120L2Q0S2TG by Onsemi

NXH80T120L2Q0S2TG

Onsemi

NXH80T120L2Q0S2TG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 88ns and low toff of 293ns. Package style is FLANGE MOUNT with RECTANGULAR shape and ISOLATED case connection.

RC-IGBT

ISOLATED

67 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

158 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

293 ns

88 ns

2.85 V