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400 A Insulated Gate Bipolar Transistors (IGBT) 10

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM200GA170DLCHOSA1 by Infineon Technologies

BSM200GA170DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;

ISOLATED

400 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

930 ns

200 ns

BSM200GB170DLCHOSA1 by Infineon Technologies

BSM200GB170DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Nominal Turn Off Time (toff): 930 ns; Terminal Form: UNSPECIFIED;

ISOLATED

400 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

930 ns

200 ns

FF400R16KF4NOSA1 by Infineon Technologies

FF400R16KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 1600 V; JESD-30 Code: R-XUFM-X10;

ISOLATED

400 A

1600 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1600 ns

1000 ns

FF300R06KE3HOSA1 by Infineon Technologies

FF300R06KE3HOSA1

Infineon Technologies

FF300R06KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 600V max. collector-emitter voltage. It has a nominal turn off time of 600ns and can handle up to 400A collector current. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.

ISOLATED

400 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

600 ns

190 ns

FS400R12A2T4BOSA1 by Infineon Technologies

FS400R12A2T4BOSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 1.85 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;

400 A

1200 V

20 V

3

150 Cel

NOT SPECIFIED

1500 W

Insulated Gate BIP Transistors

NOT SPECIFIED

1.85 V

FD300R06KE3HOSA1 by Infineon Technologies

FD300R06KE3HOSA1

Infineon Technologies

Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.

ISOLATED

400 A

600 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

600 ns

190 ns

FF300R06KE3B2HOSA1 by Infineon Technologies

FF300R06KE3B2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 400 A; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

400 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

940 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

600 ns

190 ns

1.9 V

MG06300D-BN4MM by Littelfuse

MG06300D-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

400 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

590 ns

180 ns

IFF300B17N2E4PB11BPSA1 by Infineon Technologies

IFF300B17N2E4PB11BPSA1

Infineon Technologies

Infineon Technologies' IFF300B17N2E4PB11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and max current of 400A for POWER CONTROL applications. Features include toff of 830ns, ton of 340ns, UL RECOGNIZED standard compliance.

ISOLATED

400 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

R-XUFM-X26

2

26

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

830 ns

340 ns

FS200R07A02E3S6BKSA2 by Infineon Technologies

FS200R07A02E3S6BKSA2

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 694 W; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 700 V; Nominal Turn Off Time (toff): 570 ns; Maximum VCEsat: 6.5 V;

ISOLATED

400 A

700 V

6.5 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

694 W

NOT SPECIFIED

SILICON

570 ns

220 ns

6.5 V