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370 A Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM200GA120DLCHOSA1 by Infineon Technologies

BSM200GA120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn On Time (ton): 190 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

190 ns

BSM200GA120DLCSHOSA1 by Infineon Technologies

BSM200GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

190 ns

FD300R12KS4HOSA1 by Infineon Technologies

FD300R12KS4HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn Off Time (toff): 590 ns; No. of Terminals: 5;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

590 ns

180 ns

FF300R12KS4HOSA1 by Infineon Technologies

FF300R12KS4HOSA1

Infineon Technologies

FF300R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 370A, and turn off time of 590ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.

FAST

ISOLATED

370 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

FF300R12MS4BOSA1 by Infineon Technologies

FF300R12MS4BOSA1

Infineon Technologies

FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.

ISOLATED

370 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

FD300R12KS4B5HOSA1 by Infineon Technologies

FD300R12KS4B5HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1950 W; Maximum Collector Current (IC): 370 A; No. of Elements: 1;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

1

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1950 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

3.75 V

F4250R17MP4B11BPSA1 by Infineon Technologies

F4250R17MP4B11BPSA1

Infineon Technologies

Infineon's F4250R17MP4B11BPSA1 is a N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max collector-emitter voltage of 1700V and can handle a max collector current of 370A. Ideal for power control applications due to its fast turn-off time of 1030ns and turn-on time of 480ns.

ISOLATED

370 A

1700 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X13

4

13

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1030 ns

480 ns