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3460 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ2400R12HP4NPSA1 by Infineon Technologies

FZ2400R12HP4NPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 3460 A; Maximum Operating Temperature: 150 Cel; Terminal Form: UNSPECIFIED;

ISOLATED

3460 A

1200 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1440 ns

880 ns

FZ2400R12HP4HOSA2 by Infineon Technologies

FZ2400R12HP4HOSA2

Infineon Technologies

Infineon's FZ2400R12HP4HOSA2 IGBT features N-CHANNEL polarity, 2 elements with built-in diode in a common gate configuration. Ideal for power control applications, it offers a max collector-emitter voltage of 1200V and a max collector current of 3460A. With nominal turn-off time of 1440ns and turn-on time of 880ns, this rectangular package with flange mount is designed for isolated case connection.

ISOLATED

3460 A

1200 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

1

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1440 ns

880 ns