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340 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS225R17KE3BOSA1 by Infineon Technologies

FS225R17KE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; JESD-30 Code: R-XUFM-X29; Terminal Position: UPPER;

ISOLATED

340 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1300 ns

375 ns

FS225R17KE4BOSA1 by Infineon Technologies

FS225R17KE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Maximum Collector-Emitter Voltage: 1700 V; No. of Elements: 6;

ISOLATED

340 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1500 ns

350 ns

FF225R17ME3BOSA1 by Infineon Technologies

FF225R17ME3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;

ISOLATED

340 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1300 ns

375 ns

FF225R17ME4BOSA1 by Infineon Technologies

FF225R17ME4BOSA1

Infineon Technologies

Infineon Technologies' FF225R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, current of 340A, and turn off time of 1500ns. Ideal for power control applications due to its silicon material and operating temp up to 175°C.

ISOLATED

340 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1500 ns

350 ns

FF225R17ME4B11BOSA1 by Infineon Technologies

FF225R17ME4B11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; No. of Terminals: 11; Package Style (Meter): FLANGE MOUNT;

ISOLATED

340 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1500 ns

350 ns

FF225R17ME4PBPSA1 by Infineon Technologies

FF225R17ME4PBPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

340 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1500 ns

350 ns

FF225R17ME4PB11BPSA1 by Infineon Technologies

FF225R17ME4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

340 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1500 ns

350 ns

IXYK110N120B4 by Littelfuse

IXYK110N120B4

Littelfuse

Littelfuse IXYK110N120B4 is an N-CHANNEL IGBT transistor with 1200V VCE, 340A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 1360W and operates b/w -55 to 175°C temperatures.

COLLECTOR

340 A

1200 V

SINGLE

6.5 V

20 V

TO-264AA

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

520 ns

95 ns

2.1 V