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2600 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1600R17KF6CB2NOSA1 by Infineon Technologies

FZ1600R17KF6CB2NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

2600 A

1700 V

6.5 V

20 V

125 Cel

-40 Cel

NOT SPECIFIED

N-Channel

12500 W

NOT SPECIFIED

SILICON

1360 ns

490 ns

3.1 V

FD1600/1200R17KF6C_B2 by Infineon Technologies

FD1600/1200R17KF6C_B2

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2600 A; Package Body Material: UNSPECIFIED; Transistor Element Material: SILICON;

ISOLATED

2600 A

1700 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

360 ns

490 ns