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2300 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R33KL2CNOSA1 by Infineon Technologies

FZ1200R33KL2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2300 A; Package Body Material: UNSPECIFIED;

ISOLATED

2300 A

3300 V

COMPLEX

20 V

R-XUFM-X9

3

9

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

14500 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

4250 ns

1700 ns

3.65 V

FZ1600R17KE3NOSA1 by Infineon Technologies

FZ1600R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2300 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;

ISOLATED

2300 A

1700 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

1

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1770 ns

750 ns

FZ1200R33KL2CB5NOSA1 by Infineon Technologies

FZ1200R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2300 A; Maximum Collector-Emitter Voltage: 3300 V; No. of Elements: 3;

ISOLATED

2300 A

3300 V

COMPLEX

R-XUFM-X9

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4250 ns

1400 ns