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1825 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R12HE4PHPSA1 by Infineon Technologies

FZ1200R12HE4PHPSA1

Infineon Technologies

FZ1200R12HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 1825A IC, and 660ns ton. It is used for POWER CONTROL applications requiring high current handling and fast switching capabilities in a FLANGE MOUNT package style.

ISOLATED

1825 A

1200 V

COMPLEX

6.4 V

20 V

R-PUFM-X7

2

7

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1130 ns

660 ns

2.1 V

FZ1200R12HE4HOSA2 by Infineon Technologies

FZ1200R12HE4HOSA2

Infineon Technologies

FZ1200R12HE4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1825A max collector current. It has a complex configuration for power control applications, featuring a nominal turn-off time of 1130ns and turn-on time of 660ns. The package style is flange mount with 7 terminals in a rectangular shape.

ISOLATED

1825 A

1200 V

COMPLEX

R-PUFM-X7

1

2

7

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1130 ns

660 ns