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1700 A Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R12KE3NOSA1 by Infineon Technologies

FZ1200R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;

ISOLATED

1700 A

1200 V

COMPLEX

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1140 ns

870 ns

FD1200R17KE3KB2NOSA1 by Infineon Technologies

FD1200R17KE3KB2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Case Connection: ISOLATED; Terminal Position: UPPER;

ISOLATED

1700 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2100 ns

1050 ns

FF1200R17KE3B2NOSA1 by Infineon Technologies

FF1200R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Terminal Form: UNSPECIFIED; No. of Elements: 2;

ISOLATED

1700 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2100 ns

1050 ns

FF1200R17KP4B2NOSA2 by Infineon Technologies

FF1200R17KP4B2NOSA2

Infineon Technologies

Infineon Technologies' FF1200R17KP4B2NOSA2 is a N-CHANNEL IGBT with 1700V VCE, 1700A IC, and 2380ns toff. Ideal for power control applications due to its separate configuration with built-in diode elements. Rectangular package style with flange mount and isolated case connection.

ISOLATED

1700 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

2380 ns

1060 ns

2PS12017E44G35911NOSA1 by Infineon Technologies

2PS12017E44G35911NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;

ISOLATED

1700 A

1700 V

6.4 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

2380 ns

1060 ns

2.2 V