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1600 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF1200R12KE3NOSA1 by Infineon Technologies

FF1200R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Nominal Turn On Time (ton): 880 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

1600 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1140 ns

880 ns

FF1200R17KE3NOSA1 by Infineon Technologies

FF1200R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-XUFM-X10;

ISOLATED

1600 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

2100 ns

1050 ns

FD1200R17KE3KNOSA1 by Infineon Technologies

FD1200R17KE3KNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

1600 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

2100 ns

1050 ns