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1300 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD800R33KF2CNOSA1 by Infineon Technologies

FD800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;

ISOLATED

1300 A

3300 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

FZ800R12KL4CNOSA1 by Infineon Technologies

FZ800R12KL4CNOSA1

Infineon Technologies

FZ800R12KL4CNOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements in parallel. It has a max voltage of 1200V, max current of 1300A, and turn-off time of 1100ns. Ideal for power control applications due to its high performance and isolated case connection.

ISOLATED

1300 A

1200 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1100 ns

450 ns

FZ800R33KF2CNOSA1 by Infineon Technologies

FZ800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7;

ISOLATED

1300 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

9600 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FD800R33KF2CKNOSA1 by Infineon Technologies

FD800R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7; Nominal Turn On Time (ton): 480 ns;

ISOLATED

1300 A

3300 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

FF800R17KF6CB2NOSA1 by Infineon Technologies

FF800R17KF6CB2NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1240 ns; Nominal Turn On Time (ton): 540 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

1300 A

1700 V

6.5 V

20 V

125 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

1240 ns

540 ns

3.1 V

FZ800R17KF6CB2NOSA1 by Infineon Technologies

FZ800R17KF6CB2NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1220 ns; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;

ISOLATED

1300 A

1700 V

6.5 V

20 V

125 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6600 W

NOT SPECIFIED

SILICON

1220 ns

440 ns

3.1 V