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1060 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF600R12ME4CB11BOSA1 by Infineon Technologies

FF600R12ME4CB11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4050 W; Maximum Collector Current (IC): 1060 A; Package Shape: RECTANGULAR;

ISOLATED

1060 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4050 W

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

710 ns

300 ns

2.1 V

FF600R12ME4CBOSA1 by Infineon Technologies

FF600R12ME4CBOSA1

Infineon Technologies

FF600R12ME4CBOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 1060A, suitable for POWER CONTROL applications. With a turn off time of 710ns and turn on time of 300ns, it offers efficient performance in RECTANGULAR package style.

ISOLATED

1060 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

710 ns

300 ns

FF600R12ME4CPBPSA1 by Infineon Technologies

FF600R12ME4CPBPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1060 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;

ISOLATED

1060 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

710 ns

300 ns