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SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DDB6U100N16RRBOSA1 by Infineon Technologies

DDB6U100N16RRBOSA1

Infineon Technologies

Infineon's DDB6U100N16RRBOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 150°C max operating temperature. Ideal for power control applications due to its single configuration with built-in diode and three-phase diode bridge.

ISOLATED

50 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

R-XUFM-X17

1

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

DDB6U84N16RRBOSA1 by Infineon Technologies

DDB6U84N16RRBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;

ISOLATED

50 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

R-XUFM-X17

1

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

DDB6U180N16RR by Infineon Technologies

DDB6U180N16RR

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

140 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

6.5 V

20 V

R-XUFM-X26

1

26

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

515 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

210 ns

2.2 V

DDB6U180N16RRB11BPSA1 by Infineon Technologies

DDB6U180N16RRB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; JESD-30 Code: R-XUFM-X26; Terminal Position: UPPER;

ISOLATED

140 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

R-XUFM-X26

1

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

210 ns