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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 17

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF800R12KE3NOSA1 by Infineon Technologies

FF800R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

1200 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1140 ns

880 ns

FF600R12KE3NOSA1 by Infineon Technologies

FF600R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 850 A; Nominal Turn On Time (ton): 880 ns; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

850 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1140 ns

880 ns

FF400R16KF4NOSA1 by Infineon Technologies

FF400R16KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 1600 V; JESD-30 Code: R-XUFM-X10;

ISOLATED

400 A

1600 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1600 ns

1000 ns

FF600R12KF4NOSA1 by Infineon Technologies

FF600R12KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;

ISOLATED

600 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1150 ns

800 ns

FF600R17KE3NOSA1 by Infineon Technologies

FF600R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Transistor Element Material: SILICON; Terminal Position: UPPER;

ISOLATED

900 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1900 ns

900 ns

FF800R12KL4CNOSA1 by Infineon Technologies

FF800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1250 A; Nominal Turn Off Time (toff): 1210 ns; Qualification: Not Qualified;

ISOLATED

1250 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1210 ns

460 ns

FF800R17KE3NOSA1 by Infineon Technologies

FF800R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1150 A; Transistor Element Material: SILICON; No. of Elements: 2;

ISOLATED

1150 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1900 ns

900 ns

FF1200R12KE3NOSA1 by Infineon Technologies

FF1200R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Nominal Turn On Time (ton): 880 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

1600 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1140 ns

880 ns

FF1200R17KE3NOSA1 by Infineon Technologies

FF1200R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-XUFM-X10;

ISOLATED

1600 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

2100 ns

1050 ns

FF400R33KF2CNOSA1 by Infineon Technologies

FF400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Terminals: 10;

ISOLATED

660 A

3300 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FF1200R17KE3B2NOSA1 by Infineon Technologies

FF1200R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Terminal Form: UNSPECIFIED; No. of Elements: 2;

ISOLATED

1700 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2100 ns

1050 ns

FD600R17KE3B2NOSA1 by Infineon Technologies

FD600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Case Connection: ISOLATED; Package Style (Meter): FLANGE MOUNT;

ISOLATED

950 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1900 ns

900 ns

FD800R33KF2CKNOSA1 by Infineon Technologies

FD800R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7; Nominal Turn On Time (ton): 480 ns;

ISOLATED

1300 A

3300 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

FF1200R17KP4B2NOSA2 by Infineon Technologies

FF1200R17KP4B2NOSA2

Infineon Technologies

Infineon Technologies' FF1200R17KP4B2NOSA2 is a N-CHANNEL IGBT with 1700V VCE, 1700A IC, and 2380ns toff. Ideal for power control applications due to its separate configuration with built-in diode elements. Rectangular package style with flange mount and isolated case connection.

ISOLATED

1700 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

2380 ns

1060 ns

FF600R17KE3B2NOSA1 by Infineon Technologies

FF600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;

ISOLATED

950 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1900 ns

900 ns

FF600R17KF6CB2NOSA1 by Infineon Technologies

FF600R17KF6CB2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 975 A; Nominal Turn Off Time (toff): 1220 ns; Transistor Application: POWER CONTROL;

ISOLATED

975 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1220 ns

470 ns

FF800R17KE3B2NOSA1 by Infineon Technologies

FF800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;

ISOLATED

1200 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

900 ns