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E-PHEMT RF & Microwave Amplifiers 3

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC8142-SX by Analog Devices

HMC8142-SX

Analog Devices

HMC8142-SX by Analog Devices is a wide band medium power RF amplifier with 19 dB gain. Operating from 81-86 GHz, it has a characteristic impedance of 50 ohm and consumes up to 450 mA at 4 V. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8142 by Analog Devices

HMC8142

Analog Devices

Analog Devices' HMC8142 is a wide band medium power RF amplifier with 19 dB gain, operating from 81-86 GHz. It features E-PHEMT technology, 50 ohm impedance, and consumes up to 450 mA at 4 V. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN