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4 RF & Microwave Amplifiers 6

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
MAX2650EUS-T by Maxim Integrated

MAX2650EUS-T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.3;

LOW NOISE

50 ohm

COMPONENT

16.5 dB

13 dBm

e0

SURFACE MOUNT

4

1000 MHz

800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

24 mA

BIPOLAR

TIN LEAD

1.3

ERA-50SM by Mini-circuits

ERA-50SM

Mini-circuits

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.

50 ohm

COMPONENT

16 dB

13 dBm

e0

SURFACE MOUNT

1

4

1500 MHz

0 MHz

85 Cel

-45 Cel

PLASTIC/EPOXY

SL,4GW-LD,.085CIR

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

60 mA

Tin/Lead (Sn/Pb)

1.2

MAX2632EUS-T by Maxim Integrated

MAX2632EUS-T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

LOW NOISE

50 ohm

COMPONENT

11 dB

5 dBm

e0

SURFACE MOUNT

4

1000 MHz

800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

11 mA

BIPOLAR

Tin/Lead (Sn/Pb)

1.25

MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.

LOW NOISE

50 ohm

COMPONENT

17.3 dB

13 dBm

e0

SURFACE MOUNT

1

4

1100 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN LEAD

1.6

HMC-C582 by Analog Devices

HMC-C582

Analog Devices

HMC-C582 by Analog Devices is a PHEMT RF amplifier with 16 dB gain, operating from 10 MHz to 20 GHz. It has a max input power of 23 dBm and requires a 15V power supply. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

16 dB

23 dBm

1

4

20000 MHz

10 MHz

75 Cel

-40 Cel

MODULE,4LEAD(UNSPEC)

15

WIDE BAND LOW POWER

900 mA

PHEMT

HMC451-SX by Analog Devices

HMC451-SX

Analog Devices

HMC451-SX by Analog Devices is a GAAS RF amplifier with 15dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.38, ideal for wideband medium power applications. With a compact surface mount construction, it operates b/w -55 to 85 °C making it suitable for various RF & microwave systems.

50 ohm

COMPONENT

15 dB

10 dBm

SURFACE MOUNT

1

4

20000 MHz

5000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

150 mA

GAAS

1.38