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Osram Opto Semiconductors Phototransistors 6

Phototransistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Collector-emitter Breakdown Voltage Configuration Maximum Dark Current Infrared (IR) Range JESD-609 Code Nominal Light Current Mounting Feature No. of Functions Maximum On State Current Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Packing Method Peak Wavelength (nm) Maximum Power Dissipation Maximum Response Time Shape Size Sub-Category Nominal Supply Voltage Terminal Finish
SFH3015FA by Osram Opto Semiconductors

SFH3015FA

Osram Opto Semiconductors

Osram Opto Semiconductors' SFH3015FA is a single phototransistor with peak wavelength of 870nm. It operates b/w -25°C to 85°C, featuring a nominal light current of 100mA and max dark current of 50nA. Ideal for applications requiring infrared detection, it has a min collector-emitter breakdown voltage of 15V and can handle a max on state current of 0.015A.

15 V

SINGLE

50 nA

YES

100 mA

SURFACE MOUNT

1

.015 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

TR, 7 INCH

870

SQUARE

.35 mm

BPX43-4/5 by Osram Opto Semiconductors

BPX43-4/5

Osram Opto Semiconductors

Osram Opto Semiconductors' BPX43-4/5 is a 4.7mm single phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 125°C, with max power dissipation of 0.22W and response time of 0.000018s. Ideal for IR applications, it has a nominal light current of 15mA and max on state current of 0.05A.

SINGLE

100 nA

YES

e3

15 mA

THROUGH HOLE MOUNT

1

.05 A

125 Cel

-40 Cel

PHOTO TRANSISTOR

880

.22 W

.000018 s

ROUND

4.7 mm

Photo Transistors

Tin (Sn)

SFH3400-2/3-Z by Osram Opto Semiconductors

SFH3400-2/3-Z

Osram Opto Semiconductors

SFH3400-2/3-Z by Osram Opto Semiconductors is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40 to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.1mA light current sensitivity.

20 V

SINGLE

100 nA

YES

e3

.1 mA

1

100 Cel

-40 Cel

PHOTO TRANSISTOR

850

SQUARE

2 mm

Tin (Sn)

SFH3400-Z by Osram Opto Semiconductors

SFH3400-Z

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH3400-Z is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40°C to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.063mA light current sensitivity.

20 V

SINGLE

100 nA

YES

.063 mA

1

100 Cel

-40 Cel

PHOTO TRANSISTOR

850

SQUARE

2 mm

SFH3710-3/4-Z by Osram Opto Semiconductors

SFH3710-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3710-3/4-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.

SINGLE

50 nA

NO

.35 mA

1

85 Cel

-40 Cel

PHOTO TRANSISTOR

570

SQUARE

.29 mm

SFH3605-3/4-Z by Osram Opto Semiconductors

SFH3605-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3605-3/4-Z is a single phototransistor with peak wavelength of 990nm. It operates b/w -40 to 100°C, dissipating max 0.13W power. Ideal for IR applications, it has max on-state current of 0.015A and nominal light current of 0.18mA.

AEC-Q101

SINGLE

50 nA

YES

.18 mA

SURFACE MOUNT

1

.015 A

100 Cel

-40 Cel

PHOTO TRANSISTOR

TR, 7 INCH

990

.13 W

ROUND