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Tin (Sn) Phototransistors 2

Phototransistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Collector-emitter Breakdown Voltage Configuration Maximum Dark Current Infrared (IR) Range JESD-609 Code Nominal Light Current Mounting Feature No. of Functions Maximum On State Current Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Packing Method Peak Wavelength (nm) Maximum Power Dissipation Maximum Response Time Shape Size Sub-Category Nominal Supply Voltage Terminal Finish
BPX43-4/5 by Osram Opto Semiconductors

BPX43-4/5

Osram Opto Semiconductors

Osram Opto Semiconductors' BPX43-4/5 is a 4.7mm single phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 125°C, with max power dissipation of 0.22W and response time of 0.000018s. Ideal for IR applications, it has a nominal light current of 15mA and max on state current of 0.05A.

SINGLE

100 nA

YES

e3

15 mA

THROUGH HOLE MOUNT

1

.05 A

125 Cel

-40 Cel

PHOTO TRANSISTOR

880

.22 W

.000018 s

ROUND

4.7 mm

Photo Transistors

Tin (Sn)

SFH3400-2/3-Z by Osram Opto Semiconductors

SFH3400-2/3-Z

Osram Opto Semiconductors

SFH3400-2/3-Z by Osram Opto Semiconductors is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40 to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.1mA light current sensitivity.

20 V

SINGLE

100 nA

YES

e3

.1 mA

1

100 Cel

-40 Cel

PHOTO TRANSISTOR

850

SQUARE

2 mm

Tin (Sn)