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Renesas Electronics Laser Diodes 13

Laser Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Configuration Maximum Forward Current Maximum Forward Voltage JESD-609 Code Mounting Feature No. of Functions Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Nominal Output Power Packing Method Peak Wavelength (nm) Maximum Response Time Semiconductor Material Shape Size Spectral Bandwidth Sub-Category Terminal Finish Maximum Threshold Current
NX7337BF-AA-AZ by Renesas Electronics

NX7337BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .000000002 s;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000002 s

InGaAsP

4.5 m

Laser Diodes

NX7338BF-AA-AZ by Renesas Electronics

NX7338BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000001 s

InGaAsP

4.5 m

Laser Diodes

NX7339BB-AA-AZ by Renesas Electronics

NX7339BB-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 4 V;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000001 s

InGaAsP

4.5 m

Laser Diodes

NX7363JB-BC-AZ by Renesas Electronics

NX7363JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000002 s;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1310

.000000002 s

InGaAsP

3 m

Laser Diodes

NX7663JB-BC-AZ by Renesas Electronics

NX7663JB-BC-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1625; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000002 s; Maximum Forward Voltage: 4 V;

4 V

65 Cel

-20 Cel

LASER DIODE

1625

.000000002 s

InGaAsP

7 m

Laser Diodes

NX7563JB-BC-AZ by Renesas Electronics

NX7563JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000002 s; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Spectral Bandwidth: 6 m;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1550

.000000002 s

InGaAsP

6 m

Laser Diodes

NX7437BF-AA-AZ by Renesas Electronics

NX7437BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Spectral Bandwidth: 10 m; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1490;

3 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1490

.000000002 s

InGaAsP

10 m

Laser Diodes

NV4V31MF-A by Renesas Electronics

NV4V31MF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE; Maximum Forward Current: .2 A;

SINGLE

.2 A

THROUGH HOLE MOUNT

1

85 Cel

-5 Cel

LASER DIODE

180 W

TRAY

405

ROUND

1.2 mm

Laser Diodes

55 mA

NV4V41SF-A by Renesas Electronics

NV4V41SF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; Maximum Operating Temperature: 30 Cel; Maximum Forward Voltage: 4.6 V; Maximum Forward Current: .6 A;

.6 A

4.6 V

THROUGH HOLE MOUNT

30 Cel

0 Cel

LASER DIODE

405

Laser Diodes

NV4V31SF-A by Renesas Electronics

NV4V31SF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 6.5 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 405;

.2 A

6.5 V

THROUGH HOLE MOUNT

85 Cel

-5 Cel

LASER DIODE

405

Laser Diodes

NX8602BF-AA-AZ by Renesas Electronics

NX8602BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1650; Maximum Forward Voltage: 3 V;

3 V

THROUGH HOLE MOUNT

60 Cel

0 Cel

LASER DIODE

1650

InGaAsP

Laser Diodes

NX8663JB-BC-AZ by Renesas Electronics

NX8663JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 4 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1650; Minimum Operating Temperature: -20 Cel;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1650

InGaAsP

Laser Diodes

NX8601BF-AA-AZ by Renesas Electronics

NX8601BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1625; Semiconductor Material: InGaAsP;

3 V

THROUGH HOLE MOUNT

85 Cel

-40 Cel

LASER DIODE

1625

InGaAsP

Laser Diodes