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LASER DIODE Laser Diodes 19

Laser Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Configuration Maximum Forward Current Maximum Forward Voltage JESD-609 Code Mounting Feature No. of Functions Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Nominal Output Power Packing Method Peak Wavelength (nm) Maximum Response Time Semiconductor Material Shape Size Spectral Bandwidth Sub-Category Terminal Finish Maximum Threshold Current
ADNV-6330 by Broadcom

ADNV-6330

Broadcom

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .012 A; Peak Wavelength (nm): 848; Minimum Operating Temperature: 5 Cel; Maximum Operating Temperature: 45 Cel;

.012 A

THROUGH HOLE MOUNT

45 Cel

5 Cel

LASER DIODE

848

Laser Diodes

NX7337BF-AA-AZ by Renesas Electronics

NX7337BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .000000002 s;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000002 s

InGaAsP

4.5 m

Laser Diodes

NX7338BF-AA-AZ by Renesas Electronics

NX7338BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000001 s

InGaAsP

4.5 m

Laser Diodes

NX7339BB-AA-AZ by Renesas Electronics

NX7339BB-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 4 V;

4 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1310

.000000001 s

InGaAsP

4.5 m

Laser Diodes

NX7363JB-BC-AZ by Renesas Electronics

NX7363JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000002 s;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1310

.000000002 s

InGaAsP

3 m

Laser Diodes

NX7663JB-BC-AZ by Renesas Electronics

NX7663JB-BC-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1625; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000002 s; Maximum Forward Voltage: 4 V;

4 V

65 Cel

-20 Cel

LASER DIODE

1625

.000000002 s

InGaAsP

7 m

Laser Diodes

NX7563JB-BC-AZ by Renesas Electronics

NX7563JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000002 s; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Spectral Bandwidth: 6 m;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1550

.000000002 s

InGaAsP

6 m

Laser Diodes

NX7437BF-AA-AZ by Renesas Electronics

NX7437BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Spectral Bandwidth: 10 m; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1490;

3 V

THROUGH HOLE MOUNT

60 Cel

-20 Cel

LASER DIODE

1490

.000000002 s

InGaAsP

10 m

Laser Diodes

NV4V31MF-A by Renesas Electronics

NV4V31MF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE; Maximum Forward Current: .2 A;

SINGLE

.2 A

THROUGH HOLE MOUNT

1

85 Cel

-5 Cel

LASER DIODE

180 W

TRAY

405

ROUND

1.2 mm

Laser Diodes

55 mA

NV4V41SF-A by Renesas Electronics

NV4V41SF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; Maximum Operating Temperature: 30 Cel; Maximum Forward Voltage: 4.6 V; Maximum Forward Current: .6 A;

.6 A

4.6 V

THROUGH HOLE MOUNT

30 Cel

0 Cel

LASER DIODE

405

Laser Diodes

NV4V31SF-A by Renesas Electronics

NV4V31SF-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 6.5 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 405;

.2 A

6.5 V

THROUGH HOLE MOUNT

85 Cel

-5 Cel

LASER DIODE

405

Laser Diodes

NX8602BF-AA-AZ by Renesas Electronics

NX8602BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1650; Maximum Forward Voltage: 3 V;

3 V

THROUGH HOLE MOUNT

60 Cel

0 Cel

LASER DIODE

1650

InGaAsP

Laser Diodes

NX8663JB-BC-AZ by Renesas Electronics

NX8663JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 4 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1650; Minimum Operating Temperature: -20 Cel;

4 V

THROUGH HOLE MOUNT

65 Cel

-20 Cel

LASER DIODE

1650

InGaAsP

Laser Diodes

NX8601BF-AA-AZ by Renesas Electronics

NX8601BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1625; Semiconductor Material: InGaAsP;

3 V

THROUGH HOLE MOUNT

85 Cel

-40 Cel

LASER DIODE

1625

InGaAsP

Laser Diodes

SPLLL90_3 by Osram Opto Semiconductors

SPLLL90_3

Osram Opto Semiconductors

Osram Opto Semiconductors' SPLLL90_3 laser diode has a peak wavelength of 905nm, response time of 0.000000013s, and spectral bandwidth of 7m. It is used in applications requiring complex configurations, such as radial mounting for optoelectronic purposes.

AEC-Q101

COMPLEX

RADIAL MOUNT

1

100 Cel

-40 Cel

LASER DIODE

905

.000000013 s

InAIGaAs/GaAs

RECTANGULAR

7 m

LNCT28PF01WW by Panasonic

LNCT28PF01WW

Panasonic

LNCT28PF01WW by Panasonic is a COMMON CATHODE 2 ELEMENTS laser diode with a peak wavelength of 661nm. It has a max forward current of 0.18A and operates b/w -10°C to 85°C. Ideal for applications requiring a rectangular-shaped laser diode with an output power of 200W, such as in medical devices or industrial equipment.

COMMON CATHODE 2 ELEMENTS

.18 A

3 V

THROUGH HOLE MOUNT

1

85 Cel

-10 Cel

LASER DIODE

200 W

TRAY

661

RECTANGULAR

70 mA

PLT5520_B1-6 by Osram Opto Semiconductors

PLT5520_B1-6

Osram Opto Semiconductors

Osram Opto Semiconductors' PLT5520_B1-6 is a 520nm laser diode with max. forward current of 0.2A and max. threshold current of 65mA. Ideal for applications requiring a nominal output power of 30W, such as in radial mount configurations for optoelectronic systems operating b/w -20°C to 60°C.

SINGLE WITH BUILT-IN PHOTO DIODE

.2 A

6.7 V

RADIAL MOUNT

1

60 Cel

-20 Cel

LASER DIODE

30 W

TRAY

520

ROUND

65 mA

RLD78MZA6-00A by ROHM

RLD78MZA6-00A

ROHM

ROHM's RLD78MZA6-00A is a 1.6mm LASER DIODE with peak wavelength of 790nm, forward current of 0.06A, and output power of 4.5W. Ideal for RADIAL MOUNT applications, operating b/w -10°C to 70°C temperature range.

SINGLE WITH BUILT-IN PHOTO DIODE

.06 A

2.3 V

RADIAL MOUNT

1

70 Cel

-10 Cel

LASER DIODE

4.5 W

790

ROUND

1.6 mm

50 mA

CVN63-90ECL by Osi Laser Diode

CVN63-90ECL

Osi Laser Diode

CVN63-90ECL by Osi Laser Diode is a 2.2mm ROUND LASER DIODE with 8m SPECTRAL BANDWIDTH. It features SINGLE configuration and RADIAL MOUNT, ideal for optical communication systems and medical devices requiring precise laser technology.

SINGLE

RADIAL MOUNT

1

LASER DIODE

ROUND

2.2 mm

8 m