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484 SRAM 1

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CYD36S36V18-200BGXC by Cypress Semiconductor

CYD36S36V18-200BGXC

Cypress Semiconductor

CYD36S36V18-200BGXC by Cypress Semiconductor is a 1MX36 SRAM with 200 MHz clock frequency, 3-STATE output, and 1.5/1.8 V supplies. Ideal for high-speed data buffering applications due to its synchronous operation and common I/O type in a square package with 484 terminals.

3.3 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

200 MHz

COMMON

S-PBGA-B484

e1

27 mm

37748736 bit

MULTI-PORT SRAM

36

3

1

2

484

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA484,22X22,40

SQUARE

GRID ARRAY

PARALLEL

260

1.5/1.8

Not Qualified

2.46 mm

.59 Amp

1.4 V

SRAMs

1500 mA

1.58 V

1.42 V

1.5

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

20

27 mm