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172 SRAM 1

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C0853V-133BBC by Cypress Semiconductor

CY7C0853V-133BBC

Cypress Semiconductor

CY7C0853V-133BBC by Cypress Semiconductor is a 256Kx36 SRAM with synchronous operation at 133MHz. It features a low profile grid array package and operates at 3.3V, making it ideal for high-speed memory applications in commercial-grade devices. With a memory density of 9437184 bits and fast access time of 4.7ns, it offers efficient parallel data processing capabilities.

4.7 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

S-PBGA-B172

e0

15 mm

9437184 bit

MULTI-PORT SRAM

36

3

1

2

172

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

220

3.3

Not Qualified

1.25 mm

.075 Amp

3.14 V

SRAMs

400 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm