Loading...

DIP Other Function Memory ICs 25

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
XC17S05PD8C by Xilinx

XC17S05PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

70 Cel

0 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S05PD8I by Xilinx

XC17S05PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

85 Cel

-40 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S05XLPD8C by Xilinx

XC17S05XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

54544 bit

MEMORY CIRCUIT

1

1

1

8

54544 words

54544

SYNCHRONOUS

70 Cel

0 Cel

54544X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8C by Xilinx

XC17S10PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8I by Xilinx

XC17S10PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

85 Cel

-40 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8C by Xilinx

XC17S10XLPD8C

Xilinx

The Xilinx XC17S10XLPD8C is a 95752-bit memory circuit IC with 3.3V supply voltage, operating at up to 10MHz clock frequency. It features synchronous operation, common I/O type, and 3-STATE output characteristics. Ideal for applications requiring low power consumption and high-speed memory access in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8I by Xilinx

XC17S10XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8C by Xilinx

XC17S20PD8C

Xilinx

The Xilinx XC17S20PD8C is a 178144-bit memory circuit IC with synchronous operation and 3-STATE output. It operates at a max clock frequency of 10 MHz, suitable for applications requiring high-speed memory access. With a package style of IN-LINE and through-hole terminal form, it is commonly used in commercial-grade systems needing reliable memory storage.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8I by Xilinx

XC17S20PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8C by Xilinx

XC17S20XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 1;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8I by Xilinx

XC17S20XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8C by Xilinx

XC17S30PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8I by Xilinx

XC17S30PD8I

Xilinx

XC17S30PD8I by Xilinx is a 247968-bit MEMORY CIRCUIT with 3-STATE output characteristics. Operating at 10 MHz clock frequency, it has an industrial temperature grade and synchronous mode. Commonly used in applications requiring reliable memory storage and retrieval within the industrial sector.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8C by Xilinx

XC17S30XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 5 mA;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8I by Xilinx

XC17S30XLPD8I

Xilinx

XC17S30XLPD8I by Xilinx is a 249168-bit MEMORY CIRCUIT with 3.3V supply, operating at up to 10MHz clock frequency. It features an industrial temperature grade range from -40°C to 85°C and offers a synchronous operation mode. This IC is commonly used in applications requiring high-speed memory functions.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8C by Xilinx

XC17S40PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8I by Xilinx

XC17S40PD8I

Xilinx

XC17S40PD8I by Xilinx is a 329312-bit MEMORY CIRCUIT IC with 3-STATE output, operating at up to 10 MHz clock frequency. It features a synchronous mode, common I/O type, and operates in industrial temperature range. Ideal for applications requiring high memory density and low standby current.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8C by Xilinx

XC17S40XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8I by Xilinx

XC17S40XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words Code: 330696;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

85 Cel

-40 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150XLPD8C by Xilinx

XC17S150XLPD8C

Xilinx

Xilinx XC17S150XLPD8C is a 1040128-bit MEMORY CIRCUIT with 3.3V supply, 10MHz clock frequency, and 70°C operating temp. Ideal for applications requiring synchronous operation in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1040128 bit

MEMORY CIRCUIT

1

1

1

8

1040128 words

1040128

SYNCHRONOUS

70 Cel

0 Cel

1040128X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPDG8C by Xilinx

XC17S10XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

TSOP8,.25

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPDG8C by Xilinx

XC17S30XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPDG8C by Xilinx

XC17S40XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

47L16-E/P by Microchip Technology

47L16-E/P

Microchip Technology

47L16-E/P by Microchip Technology is a 2KX8 EEPROM+SRAM memory IC with 16384 bit density. Operating in synchronous mode, it has a max access time of 400 ns and operates b/w -40 to 125 °C. Ideal for automotive applications, this rectangular IN-LINE package offers reliable performance in various systems.

400 ns

R-PDIP-T8

e3

9.271 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

5.334 mm

3.6 V

2.7 V

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

MR45V200BRAZAARL by Lapis Semiconductor

MR45V200BRAZAARL

Lapis Semiconductor

MR45V200BRAZAARL by Lapis Semiconductor is a 256KX8 memory IC with CMOS technology. Operating at 3.3V, it has an industrial temperature grade and offers 2097152 bits of memory density. Ideal for applications requiring synchronous operation in industrial settings.

R-PDIP-T8

9.2 mm

2097152 bit

MEMORY CIRCUIT

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

3.6 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm