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55 Flash Memory 1

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
NAND256W3A2BZAXE by Micron Technology

NAND256W3A2BZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 55; Package Code: TFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

45 ns

YES

NO

R-PBGA-B55

10 mm

268435456 bit

FLASH

8

1

2K

55

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TFBGA

BGA55,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

8 mm