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Renesas Electronics DRAM 11

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
UPD48576209FF-E33-DW1-A by Renesas Electronics

UPD48576209FF-E33-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Access Time: .35 ns; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

.35 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

716 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E18-DW1-A by Renesas Electronics

UPD48576218FF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 603979776 bit; Maximum Standby Current: .055 Amp;

MULTI BANK PAGE BURST

.22 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

1078 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E33-DW1-A by Renesas Electronics

UPD48576218FF-E33-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 18.5 mm; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

.35 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

716 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576236FF-E18-DW1-A by Renesas Electronics

UPD48576236FF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32; Length: 18.5 mm;

MULTI BANK PAGE BURST

.22 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

1105 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E24-DW1 by Renesas Electronics

UPD48576218FF-E24-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Maximum Seated Height: 1.17 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

872 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576236FF-E24-DW1 by Renesas Electronics

UPD48576236FF-E24-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Terminal Form: BALL;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

891 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

UPD48288209AFF-E24-DW1-A by Renesas Electronics

UPD48288209AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

COMMON

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

11 mm

UPD48288236AFF-E18-DW1-A by Renesas Electronics

UPD48288236AFF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 533 MHz; Memory Width: 36;

533 MHz

COMMON

R-PBGA-B144

e6

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

UPD48288236AFF-E33-DW1 by Renesas Electronics

UPD48288236AFF-E33-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 36; JESD-30 Code: R-PBGA-B144;

300 MHz

COMMON

R-PBGA-B144

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

BALL

.8 mm

BOTTOM

UPD48288118AFF-E24-DW1-A by Renesas Electronics

UPD48288118AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN BISMUTH

BALL

1 mm

BOTTOM

11 mm

UPD48288118AFF-E24-DW1 by Renesas Electronics

UPD48288118AFF-E24-DW1

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm